Failure-mode analysis of high-power single-mode 980-nm pump laser diodes

Aland K. Chin; Zhiping Wang; Kejian Luo; Alan Nelson; Zuntu Xu

doi:10.1117/12.473280

19 June 2003 Failure-mode analysis of high-power single-mode 980-nm pump laser diodes

Aland K. Chin, Zhiping Wang, Kejian Luo, Alan Nelson, Zuntu Xu

Proceedings Volume 4993, High-Power Fiber and Semiconductor Lasers; (2003) https://doi.org/10.1117/12.473280
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

This study examines catastrophic optical damage in failed, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, ridge wave-guide laser diodes. Analysis techniques were selected for their simplicity to provide quick evaluation of material and device quality. The analysis techniques are chemical etching, optical microscopy, infrared microscopy, and scanning electron microscopy.

Citation Download Citation

Aland K. Chin, Zhiping Wang, Kejian Luo, Alan Nelson, and Zuntu Xu "Failure-mode analysis of high-power single-mode 980-nm pump laser diodes", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); https://doi.org/10.1117/12.473280

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