Paper
19 June 2003 Failure-mode analysis of high-power single-mode 980-nm pump laser diodes
Aland K. Chin, Zhiping Wang, Kejian Luo, Alan Nelson, Zuntu Xu
Author Affiliations +
Abstract
This study examines catastrophic optical damage in failed, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, ridge wave-guide laser diodes. Analysis techniques were selected for their simplicity to provide quick evaluation of material and device quality. The analysis techniques are chemical etching, optical microscopy, infrared microscopy, and scanning electron microscopy.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aland K. Chin, Zhiping Wang, Kejian Luo, Alan Nelson, and Zuntu Xu "Failure-mode analysis of high-power single-mode 980-nm pump laser diodes", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); https://doi.org/10.1117/12.473280
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Electroluminescence

Failure analysis

Semiconductors

Coating

Microscopy

Chemical analysis

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