19 June 2003 Gain and luminescence modeling for high-power laser applications
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Proceedings Volume 4993, High-Power Fiber and Semiconductor Lasers; (2003) https://doi.org/10.1117/12.479438
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joerg Hader, Joerg Hader, Aramais R. Zakharian, Aramais R. Zakharian, Jerome V. Moloney, Jerome V. Moloney, Thomas R. Nelson, Thomas R. Nelson, James E. Ehret, James E. Ehret, Stephan W. Koch, Stephan W. Koch, } "Gain and luminescence modeling for high-power laser applications", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); doi: 10.1117/12.479438; https://doi.org/10.1117/12.479438
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