19 June 2003 Modeling and experimental result analysis for high-power VECSELs
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Proceedings Volume 4993, High-Power Fiber and Semiconductor Lasers; (2003) https://doi.org/10.1117/12.479503
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We present a comparison of experimental and microscopically based model results for optically pumped vertical external cavity surface emitting semiconductor lasers. The quantum well gain model is based on a quantitative ab-initio approach that allows calculation of a complex material susceptibility dependence on the wavelength, carrier density and lattice temperature. The gain model is coupled to the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, with temperature and carrier density dependent pump absorption. The radial distribution of the refractive index and gain due to temperature variation are computed. Thermal managment issues, highlighted by the experimental data, are discussed. Experimental results indicate a critical dependence of the input power, at which thermal roll-over occurs, on the thermal resistance of the device. This requires minimization of the substrate thickness and optimization of the design and placement of the heatsink. Dependence of the model results on the radiative and non-radiative carrier recombination lifetimes and cavity losses are evaluated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aramais R. Zakharian, Aramais R. Zakharian, Joerg Hader, Joerg Hader, Jerome V. Moloney, Jerome V. Moloney, Stephan W. Koch, Stephan W. Koch, Stephan Lutgen, Stephan Lutgen, Peter Brick, Peter Brick, Tony Albrecht, Tony Albrecht, Stefan Grotsch, Stefan Grotsch, Johann Luft, Johann Luft, Werner Spath, Werner Spath, "Modeling and experimental result analysis for high-power VECSELs", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); doi: 10.1117/12.479503; https://doi.org/10.1117/12.479503
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