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17 June 2003 Comparison of approaches to 850-nm 2D VCSEL arrays
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Proceedings Volume 4994, Vertical-Cavity Surface-Emitting Lasers VII; (2003) https://doi.org/10.1117/12.475739
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
There is a wide variety of reasons why future high-performance datacom links are believed to rely on two-dimensional VCSEL arrays suitable for direct flip-chip hybridization. Some typical are as follows: highest interconnect density, high-frequency operation, self alignment for precise mounting, productivity at high number of channels per chip. In this paper the latest approaches to flip-chip VCSELs are presented. In particular we will asses the properties of transparent substrate VCSEL arrays which are soldered light-emitting side up as well as VCSEL arrays which are soldered light-emitting side down, e.g., onto a CMOS driver chip. The VCSEL arrays are designed for bottom- or top-emission at 850 nm emission wavelength and modulation speeds up to 10 Gbps per channel.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Grabherr, Steffan Intemann, Roland Jager, Roger King, Rainer Michalzik, Hendrik Roscher, and Dieter Wiedenmann "Comparison of approaches to 850-nm 2D VCSEL arrays", Proc. SPIE 4994, Vertical-Cavity Surface-Emitting Lasers VII, (17 June 2003); doi: 10.1117/12.475739; https://doi.org/10.1117/12.475739
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