3 July 2003 Broad-area and MOPA lasers with integrated grating components for beam shaping and novel functions
Author Affiliations +
Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003); doi: 10.1117/12.480183
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
The work of the authors' group on monolithic integrated in-plane semiconductor lasers using grating components are reviewed and the recent development is reported. The grating components provide not only feedback for lasing but also novel functions such as output beam shaping and wavelength tuning. The design and fabrication of the grating components in semiconductor waveguide are outlined, and the area-selective quantum-well disordering by impurity-free vacancy diffusion is described as an effective technique to reduce the absorption loss in the passive waveguide. Then, device description, design, fabrication and experimental results of integrated master oscillator power amplifier (MOPA) lasers, high-power tunable extended-cavity lasers, and a broad-area angled-grating distributed Bragg reflector (DBR) lasers using InGaAs/AlGaAs GRIN-SCH-SQW structures are presented. All the lasers have integrated beam forming grating coupler, and allow implementation of compact and stable lensless modules that emit a collimated output beam.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiaki Suhara, Masahiro Uemukai, Naoyuki Shimada, Anders Larsson, "Broad-area and MOPA lasers with integrated grating components for beam shaping and novel functions", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.480183; https://doi.org/10.1117/12.480183
PROCEEDINGS
12 PAGES


SHARE
KEYWORDS
Quantum wells

Waveguides

Collimation

Diffraction gratings

Wavefronts

Amplifiers

Semiconductor lasers

Back to Top