3 July 2003 High-brightness long 940-nm diode lasers with double-waveguide structure
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Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.475752
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Two double-waveguide 940 nm asymmetric structures with 8 nm InxGa1-xAs quantum well (x = 0.13) are presented. They consist of an active region waveguide that includes a QW and an optical trap waveguide on the n side of the active region. The second structure has a supplementary optical wall in the p - clad that further pushes the optical field from the active region and reduces the confinement factor. The nominal lengths were chosen as 2.8 mm and 4 mm and the design values for the d/gamma ratio were 0.8 μm and 1.14 μm, respectively. Devices were fabricated with 100 μm apertures and yielded threshold current densities of 0.2 kA/cm2 and 0.17 kA/cm2 with corresponding slope efficiencies of 0.76 W/A and 0.85 W/A. At high current levels devices presented a power saturation behavior. The highest power values were 9.7 W (rollover) and 11.5 W (CMOD), respectively.
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Iulian B. Petrescu-Prahova, Thomas Moritz, John Riordan, "High-brightness long 940-nm diode lasers with double-waveguide structure", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.475752; https://doi.org/10.1117/12.475752
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