3 July 2003 High-power AlGaInN lasers for Blu-ray disc system
Author Affiliations +
Proceedings Volume 4995, Novel In-Plane Semiconductor Lasers II; (2003) https://doi.org/10.1117/12.479758
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in threshold current density (Jth) by optimizing the position of the Mg-doped layer and introducing an undoped AlGaN layer between the active layer and the Mg-doped electron-blocking layer. The mean time to failure (MTTF) of devices based on this design was found to be closely related to the dislocation density of ELO-GaN basal layer. Under 50 mW CW operation at 70°C, a MTTF of over 5000 h was realized whenthe dark spot density (indicative of dislocation density) is less than ~5×106 cm-2. Power consumption under 50mW CW operation at 70°C was approximately 0.33 W, independent of the dislocation density.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Motonubu Takeya, Motonubu Takeya, Shinroh Ikeda, Shinroh Ikeda, Tomomi Sasaki, Tomomi Sasaki, Tsuyoshi Fujimoto, Tsuyoshi Fujimoto, Yoshio Ohfuji, Yoshio Ohfuji, Takashi Mizuno, Takashi Mizuno, Kenji Oikawa, Kenji Oikawa, Yoshifumi Yabuki, Yoshifumi Yabuki, Shiro Uchida, Shiro Uchida, Masao Ikeda, Masao Ikeda, } "High-power AlGaInN lasers for Blu-ray disc system", Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.479758; https://doi.org/10.1117/12.479758

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