3 July 2003 Extremely high breakdown voltage in high-brightness InGaN LEDs
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003); doi: 10.1117/12.485631
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
High-brightness InGaN light emitting diodes (LEDs) with an output power of 2.7, 2.3, and 1.8 mW at a driving current of 20 mA for the emitting wavelength of 470, 505, and 525 nm, respectively, were realized using metalorganic vapor phase epitaxy. The I-V characteristic of these devices experiences a reverse-bias voltage higher than 60 V for a leak current of 10 μA. We find out that the dislocation density in the n-GaN layer is crucial to achieve such high breakdown voltage. By varying growth parameters, we can tune the breakdown voltage from 10 V to 60 V.
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K. R. Wang, S. C. Huang, M. F. Yeh, Y. T. Chung, Y. W. Chang, C. J. Sun, C. T. Chung, Chuong A. Tran, "Extremely high breakdown voltage in high-brightness InGaN LEDs", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.485631; https://doi.org/10.1117/12.485631
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KEYWORDS
Light emitting diodes

Indium gallium nitride

Gallium nitride

Sapphire

Semiconducting wafers

Semiconductor lasers

Vapor phase epitaxy

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