3 July 2003 GaInN light-emitting diodes with omnidirectional reflectors
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.479771
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN/GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN/GaN LEDs with semitransparent Ni/Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni/Au contacts.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Gessmann, Thomas Gessmann, Yun-Li Li, Yun-Li Li, E. Fred Schubert, E. Fred Schubert, John W. Graff, John W. Graff, J. K. Sheu, J. K. Sheu, } "GaInN light-emitting diodes with omnidirectional reflectors", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.479771; https://doi.org/10.1117/12.479771

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