3 July 2003 Light-emitting diodes on Si
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.476559
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
To extend the usage of silicon as light emitter in optoelectronics, two ways are exploited to overcome its indirect bangap obstacle. Metal-oxide-semiconductor structures with silicon dioxide (SiO2) nanoparticles as oxide layer exhibits electroluminescence with 1.5 x 10-4 external efficiency at Si bandgap energy. The enhancement in light emission is attributed to carrier concentration due to non-uniformity of oxide thickness. Another approach is to take advantage of direct bandgap materials. Chemically synthesized cadmium sulfide (CdS) nanoparticles are deposited on Si substrate and exhibits electroluminescence corresponding to different process treatment.
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Eih-Zhe Liang, Eih-Zhe Liang, Ching-Fuh Lin, Ching-Fuh Lin, Ting-Wien Su, Ting-Wien Su, Wu-Ping Huang, Wu-Ping Huang, Hsing-Hung Hsieh, Hsing-Hung Hsieh, } "Light-emitting diodes on Si", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476559; https://doi.org/10.1117/12.476559

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