3 July 2003 Light extraction technologies for high-efficiency GaInN-LED devices
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.476591
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Data are presented for an GaInN based thinfilm LED. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metallisation an extraction efficiency of 70% and wall plug efficiency of 24% at 460nm have been shown. The chips showed 12mW @ 20mA with a Voltage of 3.2V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volker Haerle, Volker Haerle, Berthold Hahn, Berthold Hahn, Stephan Kaiser, Stephan Kaiser, Andreas Weimar, Andreas Weimar, Dominik Eisert, Dominik Eisert, Stefan Bader, Stefan Bader, Andreas Ploessl, Andreas Ploessl, Franz Eberhard, Franz Eberhard, } "Light extraction technologies for high-efficiency GaInN-LED devices", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.476591; https://doi.org/10.1117/12.476591
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