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3 July 2003 Scalability of buried microreflector light-emitting diodes for high-current applications
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.476550
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
The combination of wafer soldering using metal layers and the introduction of buried micro-reflector structures has proven to be a promising approach to fabricate high brightness, substrate-less LEDs in the AlGaInP material system. In addition to the enhanced light output, the scalability of this approach has been predicted as a major advantage. In contrast to other approaches, larger area LEDs can be fabricated without altering the epitaxial structure and thickness of layers simply by offering a larger area for light generation. First samples of amber (λ = 615 nm) buried micro-reflector LEDs with side-length up to 1000 μm have been realized. Devices mounted in packages with improved heat sinks are capable of low voltage CW operation with currents as high as 600 mA (Vfw≤ 2,8 V) without significant thermal flattening of the light-current characteristics. The maximum luminous flux achieved at these oeprating conditions is 46 lumen. Already these first experiments demonstrate the potential of the concept of buried micro-reflector LEDs not only for high-brightness but also for high-current operation. The results are among the best values of high-flux LEDs in this wavelength range.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Illek, Ines Pietzonka, Andreas Ploessl, Peter Stauss, Walter Wegleiter, Reiner Windisch, Ralph Wirth, Heribert Zull, and Klaus P. Streubel "Scalability of buried microreflector light-emitting diodes for high-current applications", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.476550
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