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3 July 2003 Wafer-bonded thin-film surface-roughened light-emitting diodes
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Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.476566
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We propose a new process for thin-film surface-textured LEDs that provides uniform current injection for both top and bottom contacts. The structure uses a partially conductive mirror. This eliminates the need for thick epitaxial layers and makes it possible to fabricate very large LEDs. Furthermore, the new process allows to obtain both high external quantum efficiency and high wallplug efficiency. 400 x 400 μm GaInP/AlGaInP LEDs reach maximum external quantum efficiencies of 35% at 12 mA without encapsulation. The wallplug efficiency reaches 34% at 2.6 mA. At an operating current of 60 mA, the devices emit 30 mW of light.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cathleen Rooman, Stijn De Jonge, Christian Karnutsch, Klaus Streubel, Maarten Kuijk, Barundeb Dutta, Gustaaf Borghs, and Paul L. Heremans "Wafer-bonded thin-film surface-roughened light-emitting diodes", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.476566
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