1 July 2003 BIB detector development for the far infrared: from Ge to GaAs
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479623
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Silicon blocked impurity band (BIB) detectors rapidly became the state-of-the-art for photon detection in the near and mid IR range, improving device performance and increasing array size for satellite-based astronomical telescopes. The multiple advantages of the BIB device, in comparison to conventional extrinsic photoconductors, make them even more desirable for far IR detection, where photoconductors suffer from low absorption coefficients and complex transient behavior. This paper summarizes efforts to develop Ge-based and GaAs-based BIB materials and devices. Key challenges include the growth of the high purity blocking layer and the control of growth interfaces. Numerical modeling is presented that illustrates the effect on electric field profiles and device responsivity for variations in net blocking layer doping and extent of interface gradient.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nancy M. Haegel, Nancy M. Haegel, } "BIB detector development for the far infrared: from Ge to GaAs", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479623; https://doi.org/10.1117/12.479623
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