1 July 2003 Charge and spin functionality in wide bandgap oxides
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479612
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Norton, David P. Norton, Young-Woo Heo, Young-Woo Heo, Stephen J. Pearton, Stephen J. Pearton, Arthur F. Hebard, Arthur F. Hebard, Nikoleta Theodoropoulou, Nikoleta Theodoropoulou, Lynn A. Boatner, Lynn A. Boatner, John D. Budai, John D. Budai, Y. D. Park, Y. D. Park, R. G. Wilson, R. G. Wilson, } "Charge and spin functionality in wide bandgap oxides", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479612; https://doi.org/10.1117/12.479612

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