1 July 2003 Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003); doi: 10.1117/12.475402
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.
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Agisilaos A. Iliadis, Aristos Christou, "Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.475402; https://doi.org/10.1117/12.475402
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KEYWORDS
Vertical cavity surface emitting lasers

Gallium

Mirrors

Reflectivity

Aluminum

Cladding

Laser damage threshold

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