1 July 2003 Direct probing of local-density-of-states in semiconductor nanostructures
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479607
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
The electronic features of semiconductor nanostructures, such as zero-dimensional states, are usually inferred from macroscopic optical and transport experiments. Although, direct probing of electrical features in semiconductor nanostructures looks very attractive, it is very difficult for a conventional semiconductor structure. However, direct probing becomes possible through a combination of low-temperature scanning tunneling microscopy and InAs(111)A surface in an ultra-high vacuum, where conductive electrons automatically accumulate near the clean surface. The clear observation of a Friedel oscillation pattern around a dislocation demonstrates successful mapping of the local-density-of-states (LDOS) of the conductive electrons. Inverted pyramidal defects are naturally formed during molecular beam epitaxial growth of InAs thin films on GaAs(111)A substrates and they operate as well-defined quantum dots. The measured LDOS pattern inside the quantum dots clearly changes as a function of energy, i.e. a sample bias, reflecting the LDOS pattern of each zero-dimensional state. A resonant concentration of the LDOS to the zero-dimensional energy levels is also demonstrated in these experiments. The LDOS measurements of a series of inverted pyramidal quantum dots with different side lengths and their comparison with theoretical calculations suggest a unique feature of the quantum dot system examined in this study.
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Kiyoshi Kanisawa, Kiyoshi Kanisawa, Yasuhiro Tokura, Yasuhiro Tokura, Hiroshi Yamaguchi, Hiroshi Yamaguchi, Yoshiro Hirayama, Yoshiro Hirayama, } "Direct probing of local-density-of-states in semiconductor nanostructures", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479607; https://doi.org/10.1117/12.479607


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