1 July 2003 HgCdTe infrared detectors: historical prospect
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479679
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
HgCdTe infrared (IR) detectors have been intensively developed since the first synthesis of this ternary alloy in 1958. The paper summarizes the fundamental properties of this versatile alloy, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoni Rogalski, Antoni Rogalski, } "HgCdTe infrared detectors: historical prospect", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479679; https://doi.org/10.1117/12.479679

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