1 July 2003 Intersubband quantum-box midinfrared semiconductor lasers
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.485544
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Semiconductor lasers employing intersubband transitions in quantum boxes, so-called intersubband quantum-box (IQB) lasers are found, in theory, capable to have significantly lower threshold current densities and operating voltages than quantum cascade (QC) lasers. For that to happen, an enhancement factor of about 20 in the LO-phonon-assisted electron relaxation time is necessary, which is quite possible according to recent experimental data. The increased gain for the radiative stage in an IQB laser eliminates the need for a multiradiative-stage structure (typically 25 stages in QC lasers). Due to their inherently lower input power requirements, IQB lasers operating in the mid-IR wavelength range should be capable of much higher average-output powers than QC lasers at all temperatures, and continuous-wave (CW) operation at room temperature with high wallplug efficiency.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Botez, Dan Botez, Chia-Fu Hsu, Chia-Fu Hsu, Peter S. Zory, Peter S. Zory, } "Intersubband quantum-box midinfrared semiconductor lasers", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.485544; https://doi.org/10.1117/12.485544
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