1 July 2003 New III-V-based magnetic semiconductors and their optical and magnetic properties
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.482476
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
II-V-based magnetic semiconductors are gathering great interest because of their potential utility as new functional materials that are expected to lead to the introduction of spin degree-of-freedom for semiconductor devices. New magnetic semiconductor heterostructure, InMnAsSb/InSb, was proposed and grown by low temperature molecular beam epitaxy (MBE). Mid-infrared (2-6 μm) light-induced ferromagnetism was observed at temperatures lower than 40-50K and this light-induced magnetization remained even after the stop of light irradiation. Observed characteristics are applicable to the mid-infrared sensor/memory devices. New magnetic semiconductor GaCrN layers were grown by electron-cyclotron-resonance (ECR) plasma-assisted MBE and the ferromagnetic characteristics were observed at 7-400K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M-H) curves at all measuring temperatures. We also observed the photoluminescence (PL) emission from GaCrN layers. Applications to the novel devices controlling charges (electrons and holes), spins and photons are expected.
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Hajime Asahi, Hajime Asahi, Y. K. Zhou, Y. K. Zhou, Mamoru Hashimoto, Mamoru Hashimoto, R. Asano, R. Asano, Hiroyuki Tanaka, Hiroyuki Tanaka, } "New III-V-based magnetic semiconductors and their optical and magnetic properties", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.482476; https://doi.org/10.1117/12.482476
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