Optical studies of InAs/GaAs and Ge/Si quantum dot structures

Gwo-Jen Jan; C. M. Lai; F. Y. Chang; Y. H. Perng; C. W. Chang; C. H. Kao; I. C. Jan; H. H. Lin

doi:10.1117/12.482478

1 July 2003 Optical studies of InAs/GaAs and Ge/Si quantum dot structures

Gwo-Jen Jan, C. M. Lai, F. Y. Chang, Y. H. Perng, C. W. Chang, C. H. Kao, I. C. Jan, H. H. Lin

Author Affiliations +

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.482478
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

We studied the photoreflectance (PR) and photoluminescence (PL) spectroscopies of self-assembled InAs quantum dots grown on n⁺-GaAs (100) by molecular beam epitaxy. The PL spectroscopy of self-assembled Ge quantum dots (Ge-QDs) grown on n⁺-Si (100) by metal organic chemical vapor deposition epitaxy was also investigated. PL spectra show the optical transitions from the ground state and excited states in the InAs quantum dots (InAs-QDs) and a transition from the ground state in the Ge-QDs at the temperature 20 K. PR spectra show the energy features of the transitions of the ground state and four excited states in the InAs-QDs, InAs wetting layer, and GaAs band-gap. The fitted results of the transition energies and the broadening parameters are reported. The results demonstrate that low growth rate of the InAs-QDs, the submonolayer deposited of the alternating beam, and covered with the overgrowth InGaAs methods, have improved the nano-structure quality of the InAs-QD, grown at 485ºC and V/III ratio of 2. The high quality Ge-QDs were made, and characterized by PL experiments.

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Gwo-Jen Jan, C. M. Lai, F. Y. Chang, Y. H. Perng, C. W. Chang, C. H. Kao, I. C. Jan, and H. H. Lin "Optical studies of InAs/GaAs and Ge/Si quantum dot structures", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.482478

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