1 July 2003 Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.477794
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Optical properties and material microstructures of three InGaN/GaN quantum well (QW) samples with various silicon-doping concentrations in barriers were measured. From the high-resolution transmission electron microscopy images, quantum dots (QDs) of a few nm in size were observed in silicon-doped samples. The regularities of QDs in size, shape and distribution increased with doping concentration up to 5 x 1018 cm-3. Such observations implied that the reduction of quantum-confined Stark effect in such a sample was due to the relaxation of strain energy in QDs with silicon doping, besides the carrier screen effect. In other words, the microstructures were crucially changed with silicon doping in barriers. Also, the carrier localization effect was actually enhanced although potential fluctuation indeed became less randomly distributed. The calibrated radiative lifetimes in both silicon-doped samples showed the consistent trend of the formation of 0-D structure upon silicon doping.
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Yung-Chen Cheng, Yung-Chen Cheng, Cheng-Hua Tseng, Cheng-Hua Tseng, Chen Hsu, Chen Hsu, Kung-Jen Ma, Kung-Jen Ma, Shih-Wei Feng, Shih-Wei Feng, En-Chiang Lin, En-Chiang Lin, Chih Chung Yang, Chih Chung Yang, Jen-Inn Chyi, Jen-Inn Chyi, } "Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.477794; https://doi.org/10.1117/12.477794
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