1 July 2003 Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.483916
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous long and very long wavelength infrared imaging applications. One materials system has shown great theoretical and, more recently, experimental promise for these applications: InAs/InxGa1-xSb type-II superlattices. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection beyond 15 microns. The infrared properties of various compositions and designs of these type-II superlattices have been studied. The infrared photoresponse spectra are combined with quantum mechanical modeling of predicted absorption spectra to provide insight into the underlying physics behind the quantum sensing in these materials. Results for superlattice photodiodes with cut-off wavelengths as long as 25 microns will be presented.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gail J. Brown, Gail J. Brown, Frank Szmulowicz, Frank Szmulowicz, Krishnamur Mahalingam, Krishnamur Mahalingam, S. Houston, S. Houston, Yajun Wei, Yajun Wei, Aaron Gin, Aaron Gin, Manijeh Razeghi, Manijeh Razeghi, } "Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.483916; https://doi.org/10.1117/12.483916
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