1 July 2003 Review on recent development of quantum dots: from optoelectronic devices to novel biosensing applications
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003); doi: 10.1117/12.482481
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Quantum dots are one of the fascinating quantum structures in broad device applications. The progress made in III-V quantum dots due to self-assembled growth technique was incredibly rapid to realize practical device applications such as lasers and detectors. In this review, the growth issues of quantum dots in self-assembling technique and the progress made in optoelectronic devices is addressed. The 1.3 μm lasers have been successfully demonstrated on GaAs substrate with InGaAs multi-stacked QDs. The low threshold, high power laser characteristics and its carrier dynamics in QD lasers is discussed. More than 10GHz of 3dB-modulation bandwidth was obtained from well-designed 1.3 μm QD lasers. The potential application of high speed and tunable light emitting sources is reviewed. The long wavelength quantum dot photodetectors (QDIP) is another promising application of fine quantum structure. The physical properties and characteristics of QDIP are briefly addressed. The applications of quantum dots are not limited to the optoelectronic devices and currently they have received increasing attention for bio-sensing applications due to their small fine structures. We briefly discuss a model for bio-sensing mechanism of QD fine structure as interacting with bimolecular at the end.
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Seongsin M. Kim, "Review on recent development of quantum dots: from optoelectronic devices to novel biosensing applications", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.482481; https://doi.org/10.1117/12.482481
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KEYWORDS
Quantum dots

Gallium arsenide

Indium gallium arsenide

Optoelectronic devices

Modulation

Biosensing

Indium gallium phosphide

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