1 July 2003 Sensing terahertz signals with III-V quantum nanostructures
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.479611
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
The present status and future prospects of compound semiconductor quantum nanostructures for sensing terahertz (THz) signals are reviewed. Various THz detectors reported in recent publications are reviewed first. They include infrared photodetectors based on quantum wells, superlattices and quantum dots, resonant tunneling diodes, single electron transistors and plasma resonators using high mobility electron transistor structures. Then, a novel approach by the authors utilizing planar arrays of quantum dots controlled by nano-scale Schottky wrap gates is presented and discussed. It is based on photon assisted resonant tunneling of single electrons. The novel device structure allows normal incidence of THz radiation as well as high density planar integration. A large responsivity of 0.3 A/W was obtained at 20 K for 2.5 THz laser beam.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Hasegawa, Hideki Hasegawa, Seiya Kasai, Seiya Kasai, } "Sensing terahertz signals with III-V quantum nanostructures", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479611; https://doi.org/10.1117/12.479611

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