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1 July 2003 Spin-injection-induced magnetization reversal
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.475405
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
The usual charge carrier exploited in all electronic devices is the electron (and hole) and possesses hence, associated with its inertial masse, a spin degree of freedom. Manipulating spin-polarized electric current is the role devoted to Spintronics. Investigating the current induced magnetization switching (CIMS), consists in measuring the dynamics of the magnetization due to spin-polarized current injection. It is shown that two different mechanisms are operating. One can be described with a current dependent torque, and the other one is attributed to longitudinal spin-transfer.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Eric Wegrowe and T. Wade "Spin-injection-induced magnetization reversal", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.475405
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