1 July 2003 Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003); doi: 10.1117/12.479548
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Trap centers and minority carrier lifetimes are investigated in InAs/(GaIn)Sb superlattices used for photodetectors in the far-infrared wavelength range. In our InAs/(GaIn)Sb superlattice photodiodes, trap centers located at an energy level of ~1/3 band gap below the effective conduction band edge could be identified by simulating the current-voltage characteristics of the diodes. The simulation includes diffusion currents, generation-recombination contributions, band-to-band coherent tunneling, and trap assisted tunneling. By including the contributions due to trap-assisted tunneling, excellent reproduction of the current voltage curves is possible for diodes with cut-off wavelength in the whole 8-32 μm spectral range at temperatures between 140 K and 25 K. The model is supported by the observation of defect-related optical transitions at ~2/3 of the band-to-band energy in the spectra of the low temperature electroluminescence of the devices. With the combination of Hall- and photoconductivity measurements, minority carrier lifetimes are extracted as a dependence of temperature and carrier density.
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Quankui Yang, C. Pfahler, J. Schmitz, Wilfried Pletschen, Frank Fuchs, "Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479548; https://doi.org/10.1117/12.479548
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KEYWORDS
Superlattices

Photodiodes

Temperature metrology

Diffusion

Electroluminescence

Diodes

Photodetectors

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