1 July 2003 Very high-average-power quantum cascade lasers by GasMBE
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Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003); doi: 10.1117/12.507398
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Very high average power QCLs are demonstrated within the 5.8 - 9 μm wavelength range. At longer wavelengths, scaling of the power is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 μm, over 3.5 W of peak power per facet has been demonstrated at room temperature for a single 25 μm by 3 mm diode, with an average power of 150 mW at 6% duty cycle. At shorter wavelengths, highly strain-balanced heterostructures are used to create a high coduction band offset and minimize leakage current. At λ = 6 μm, utilizing a high reflective coating and epilayer-down mounting of the laser, we demonstrate 225 mW of average power from a single facet at room temperature. Increasing the conduction band offset further and optimizing the doping in the injector region has led to demonstration of > 250 mW average power (λ = 5.8 μm) at > 50% duty cycle for a 20 μm by 2 mm HR coated diode bonded epilayer-down to a copper heatsink. Also at room temperature, use of Au electroplating and wider ridges has allowed us to further demonstrate without epilayer-down bonding, 0.67 W average power at 17% duty cycle from a single 40 μm by 2 mm HR coated laser.
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Steven Slivken, Manijeh Razeghi, "Very high-average-power quantum cascade lasers by GasMBE", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.507398; https://doi.org/10.1117/12.507398
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KEYWORDS
Quantum cascade lasers

Doping

Waveguides

Laser development

Diodes

Coating

Laser damage threshold

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