9 July 2003 Combination lithography for photonic crystal circuits
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Proceedings Volume 5000, Photonic Crystal Materials and Devices; (2003) https://doi.org/10.1117/12.472814
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We propose a novel method for creating photonic crystals with designed defects. The method exploits a newly discovered property of some photoresists, which under ultraviolet (UV) illumination exhibit positive contrast whereas at the same time they behave as negative resists under electron beam exposure. In the process, substrate is spin-coated with the resist and then soft-baked to remove solvent. In order to define a defect, the sample is exposed with electron beam using a Raith50 e-beam lithography system. Subsequently, large area containing the e-beam patterned defect is exposed with a regular pattern of photonic crystal structure using ultraviolet illumination. Upon chemical developing, large photonic crystal region with local patterned defects is created in resist. This patterned resist acts as a template for etching high index material. We detail the fabrication process and present the resulting structures.
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Janusz A. Murakowski, Janusz A. Murakowski, Garrett J. Schneider, Garrett J. Schneider, Dennis W. Prather, Dennis W. Prather, } "Combination lithography for photonic crystal circuits", Proc. SPIE 5000, Photonic Crystal Materials and Devices, (9 July 2003); doi: 10.1117/12.472814; https://doi.org/10.1117/12.472814
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