GaAs/AIAs-oxide omnidirectional reflector

Yeonsang Park; Young-Geun Roh; Heonsu Jeon

doi:10.1117/12.479485

9 July 2003 GaAs/AIAs-oxide omnidirectional reflector

Yeonsang Park, Young-Geun Roh, Heonsu Jeon

Proceedings Volume 5000, Photonic Crystal Materials and Devices; (2003) https://doi.org/10.1117/12.479485
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

We introduce a compound semiconductor based omnidirectional reflector. A four layer pair stack of GaAs/AlAs was grown epitaxially using molecular beam epitaxy, which was then converted to a GaAs/Al₂O₃ multilayer stack by selective oxidation of the AlAs layers. The resultant one-dimensional photonic crystal exhibited omnidirectional reflection properties in near infrared wavelength range below 1μm. Reflectance spectra measured at various incidence angles and polarizations were observed to be in good agreements with theoretically simulated results.

Citation Download Citation

Yeonsang Park, Young-Geun Roh, and Heonsu Jeon "GaAs/AIAs-oxide omnidirectional reflector", Proc. SPIE 5000, Photonic Crystal Materials and Devices, (9 July 2003); https://doi.org/10.1117/12.479485

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