9 July 2003 Low-threshold photonic crystal laser
Author Affiliations +
Proceedings Volume 5000, Photonic Crystal Materials and Devices; (2003) https://doi.org/10.1117/12.472818
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
We have fabricated planar photonic crystal nanocavity lasers, based on our new high-quality factor design that incorporates fractional edge dislocations in triangular lattice photonic crystal cavities. Lasers with InGaAsP quantum well active material emitting at 1550nm were optically pumped with 10ns pulses, and lase at room temperature at threshold pumping powers below 220 microWatt. We have attributed this to the small mode volume and the high Q factors inherent to our device design. We have performed detailed numerical analysis of our structures, and have found an excellent agreement between theoretical predictions and experimental results. The optical field of the lasing mode in our nano-laser is localized in the air-hole region and therefore the laser can be used to investigate interaction between light and matter introduced in the cavity and nanospectroscopy.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marko Loncar, Marko Loncar, Tomoyuki Yoshie, Tomoyuki Yoshie, Yueming Qiu, Yueming Qiu, Pawan Gogna, Pawan Gogna, Axel Scherer, Axel Scherer, } "Low-threshold photonic crystal laser", Proc. SPIE 5000, Photonic Crystal Materials and Devices, (9 July 2003); doi: 10.1117/12.472818; https://doi.org/10.1117/12.472818

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