Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors

Pere Roca i Cabarrocas; Samir Kasouit; B. Kalache; Regis Vanderhaghen; Y. Bonnassieux; M. Elyaakoubi; I. D. French

doi:10.1117/12.476827

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16 May 2003 Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors

Pere Roca i Cabarrocas, Samir Kasouit, B. Kalache, Regis Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, I. D. French

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Proceedings Volume 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas; (2003) https://doi.org/10.1117/12.476827
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF₄-Ar-H₂ feedstock. In all cases, stable top gate TFT with mobility values around 1 cm²/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF₄ gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reach stable values of around 3 cm²/V.s.

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Pere Roca i Cabarrocas, Samir Kasouit, B. Kalache, Regis Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, and I. D. French "Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.476827

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