Translator Disclaimer
Paper
16 May 2003 Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors
Author Affiliations +
Abstract
Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF4-Ar-H2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm2/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reach stable values of around 3 cm2/V.s.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pere Roca i Cabarrocas, Samir Kasouit, B. Kalache, Regis Vanderhaghen, Y. Bonnassieux, M. Elyaakoubi, and I. D. French "Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.476827
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top