N-shot SLS-processed polycrystalline silicon TFTs

Mark A. Crowder; M. Moriguchi; Y. Mitani; Apostolos T. Voutsas

doi:10.1117/12.482589

16 May 2003 N-shot SLS-processed polycrystalline silicon TFTs

Mark A. Crowder, M. Moriguchi, Y. Mitani, Apostolos T. Voutsas

Proceedings Volume 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas; (2003) https://doi.org/10.1117/12.482589
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

In this paper, we focus on a variation of the 2-shot sequential lateral solidification (SLS) process for crystallization of thin Si films for TFT applications. The resulting microstructure is engineered to reduce the large discrepancy in directionality of the TFTs with respect to the lateral growth direction. Through this method, we are able to improve the mobility directionality ratio between devices with majority carrier flow parallel and perpendicular to the lateral growth direction, respectively, from 0.3 to over 0.7. Further post-SLS process thinning and planarization of the Si surface is used to improve the uniformity of device characteristics.

Citation Download Citation

Mark A. Crowder, M. Moriguchi, Y. Mitani, and Apostolos T. Voutsas "N-shot SLS-processed polycrystalline silicon TFTs", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.482589

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