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4 June 2003 Application of chalcogenide vitreous semiconductors in manufacturing holographic protective elements
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This report is aimed to review obtained in Institute of Semiconductor Physics of National Academy of Sciences of Ukraine results of investigations of phototechnical performances inherent to layers of chalcogenide vitreous semiconductors with As40S60-xSex composition (x=0...20) as a medium for recording holographic protective masterelements. Such inorganic resists are sensitive to visible and ultraviolet radiation and electron beams, which enable one to produce master optical-digital holographic elements possessing many safety levels. When exposing photoresist, to obtaine interferential 2D/3D patterns, we used He-Cd laser radiation and electron-beam submicrometer technology. The exposure was chosen from the range 20 to 300 mJ/cm2, and spatial frequencies of obtained gratings were 800 to 1600 mm-1. In addition, resist performances were investigated using the Dot-matrix technology. Results of investigations showed that As40S60-xSex (x=0...20) photoresist is characterized by higher light and electron-beam sensitivity and this enables to get combined optical-digital protective elements: digital hologram; optical and digital hologram; combination of optical and digital holograms with submicrotext image.
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Sergiy A. Kostyukevych "Application of chalcogenide vitreous semiconductors in manufacturing holographic protective elements", Proc. SPIE 5005, Practical Holography XVII and Holographic Materials IX, (4 June 2003);

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