16 May 2003 Simulation-based development and characterization of a CCD architecture for 1 million frames per second
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A new high-speed CCD-sensor, capable of capturing 103 consecutive images at a speed of 1 million frames per second, was developed by the authors. To reach this high frame-rate, 103 CCD-storage-cells are placed next to each image-pixel. Sensors utilizing this on-chip-memory-concept can be called In-situ Storage Image Sensor or ISIS. The ISIS is build in standard CCD-technology. To check if this technology could be used for an ISIS, a test sensor called ISIS V1 was designed first. The ISIS V1 is just a simple modification of an existing standard CCD-sensor and it is capable of taking 17 consecutive images. The new sensor called ISIS V2 is a dedicated design in the existing technology. It is equipped with storage CCD-cells that are also used in the standard CCD-sensor, large light-sensitive pixels, an overwriting mechanism to drain old image information and a CCD-switch to use a part of the storage cells also as vertical read-out registers. Nevertheless, the new parts in the architecture had to be simulated by a 3-D device simulator. Simulation results and characteristic parameters of the ISIS-CCD as well as applications of the camera are given.
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Dirk Poggemann, Dirk Poggemann, Arno Ruckelshausen, Arno Ruckelshausen, Takeharu Goji Etoh, Takeharu Goji Etoh, Albert J. P. Theuwissen, Albert J. P. Theuwissen, Jan T. Bosiers, Jan T. Bosiers, Hideki Mutoh, Hideki Mutoh, Yasushi Kondo, Yasushi Kondo, } "Simulation-based development and characterization of a CCD architecture for 1 million frames per second", Proc. SPIE 5017, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV, (16 May 2003); doi: 10.1117/12.476794; https://doi.org/10.1117/12.476794

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