Auger recombination in strained InGaAsP quantum wells with Eg=0.7-1.6 eV

Z. N. Sokolova; D. I. Gurylev; Nikita A. Pikhtin; Ilya S. Tarasov

doi:10.1117/12.513820

11 June 2003 Auger recombination in strained InGaAsP quantum wells with E_g = 0.7-1.6 eV

Z. N. Sokolova, D. I. Gurylev, Nikita A. Pikhtin, Ilya S. Tarasov

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513820
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Auger coefficients have been measured in five light emitting diodes (LEDs) with strained quantum wells in active region covered a wide range of wavelength. LED were fabricated from identical high efficient laser heterostructures. The obtained Auger coefficients increase from 3 x 10^-30 to 1.8 x 10^-28 cm⁶/c as wavelength changes from 0.78 to 1.8 μm.

Citation Download Citation

Z. N. Sokolova, D. I. Gurylev, Nikita A. Pikhtin, and Ilya S. Tarasov "Auger recombination in strained InGaAsP quantum wells with E_g = 0.7-1.6 eV", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513820

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available