11 June 2003 Auger recombination in strained InGaAsP quantum wells with Eg = 0.7-1.6 eV
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Abstract
Auger coefficients have been measured in five light emitting diodes (LEDs) with strained quantum wells in active region covered a wide range of wavelength. LED were fabricated from identical high efficient laser heterostructures. The obtained Auger coefficients increase from 3 x 10-30 to 1.8 x 10-28 cm6/c as wavelength changes from 0.78 to 1.8 μm.
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Z. N. Sokolova, Z. N. Sokolova, D. I. Gurylev, D. I. Gurylev, Nikita A. Pikhtin, Nikita A. Pikhtin, Ilya S. Tarasov, Ilya S. Tarasov, } "Auger recombination in strained InGaAsP quantum wells with Eg = 0.7-1.6 eV", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513820; https://doi.org/10.1117/12.513820
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