11 June 2003 Bandgap of hexagonal InN and InGaN alloys
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We present results of photoluminescence studies of the band gap of non-intentionally doped single-crystalline hexagona InN layers and In-rich InxGa1-xN alloy layers (0.36 < x < 1). The band gap of InN is found to be close to 0.7 eV. This is much smaller than the values of 1.8 eV to 2.1 eV cited in the current literature. A bowing parameter of b ≈ 2.5 eV allows one to reconcile our and the literature data for the band gap values of InxGa1-xN alloys in the entire composition region.
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V. Yu. Davydov, V. Yu. Davydov, A. A. Klochikhin, A. A. Klochikhin, Vadim V. Emtsev, Vadim V. Emtsev, A. V. Sakharov, A. V. Sakharov, S. V. Ivanov, S. V. Ivanov, V. A. Vekshin, V. A. Vekshin, Friedhelm Bechstedt, Friedhelm Bechstedt, J. Furthmueller, J. Furthmueller, Jochen Aderhold, Jochen Aderhold, Jurgen Graul, Jurgen Graul, A. V. Mudryi, A. V. Mudryi, H. Harima, H. Harima, A. Hashimoto, A. Hashimoto, A. Yamamoto, A. Yamamoto, J. Wu, J. Wu, Henning Feick, Henning Feick, Eugene E. Haller, Eugene E. Haller, } "Bandgap of hexagonal InN and InGaN alloys", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511325; https://doi.org/10.1117/12.511325

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