11 June 2003 Ferromagnetic GaMnAs for spintronic devices
Author Affiliations +
Abstract
Ferromagnetic Ga1-xMnxAs films containing up to 5.1 at%Mn were grown by low-temperature MBE. The structural, electrical, and magnetic properties of the layers are reported. At x > 0.01, the materials show a ferromagnetic behavior. The Curie temperature reaches 80 K at 5.1at% Mn. We propose the use of a n+-GaAs/p+-GaMnAs Esaki-diode (ferromagnetic Esaki-diode, FED) to provide injection of spin-polarized electrons via interband tunneling. Under reverse bias, spin-polarized electrons at the Fermi level in the valence band of GaMnAs tunnel to the conduction band of GaAs in contrast to the injection of spin-polarized holes used before.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Achim Koeder, W. Schoch, S. Frank, R. Kling, M. Oettinger, V. Avrutin, W. Limmer, Rolf Sauer, Andreas Waag, "Ferromagnetic GaMnAs for spintronic devices", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514534; https://doi.org/10.1117/12.514534
PROCEEDINGS
3 PAGES


SHARE
Back to Top