11 June 2003 GaAs-based tunnel junctions
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Abstract
The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7 x 10-5 Ω/cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Moeller, J. Boettcher, and Harald Kuenzel "GaAs-based tunnel junctions", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514616; https://doi.org/10.1117/12.514616
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