11 June 2003 Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots
Author Affiliations +
Abstract
Heterostructure with InxGa1-xAs quantum dots on Si (001) substrate was grown by molecular beam epitaxy (MBE). Step graded Si-Si1-xGex-Ge buffer layers and InxGa1-xAs quantum dots (QDs) in GaAs matrix were deposited consecutively in two different MBE systems. Optical and structural characterizations of heterostructure were performed by photoluminescence (PL) at 77K and 300 K and transmission electron microscopy (TEM), respectively. Si-Si1-xGex-GaAs heterostructure with InGaAs QDs exhibited intense photoluminescence in range 1.3 μm at room temperature.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timur M. Burbaev, I. P. Kazakov, Vadim A. Kurbatov, M. M. Rzaev, and V. I. Vdovin "Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513625; https://doi.org/10.1117/12.513625
PROCEEDINGS
3 PAGES


SHARE
Advertisement
Advertisement
Back to Top