11 June 2003 Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences
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Abstract
Unusual coupling of heterostructure optical phonons and electronic excitations in quantum dots (QD's) was observed by photoluminescence spectroscopy in strain-induced InGaAs/GaAs QD's (SIQD's) and self-assembled InAs/GaAs QD's (SAQD's). Phonon-assisted interband transitions in SIQD's were found to be governed by zone center bulk GaAs TO and LO phonons via deformation potential interaction, whereas polar interaction was inessential. For SAQD's, a n-doped GaAs substrate was found to effect on QD intraband relaxation of carriers via coupling between them and substrate LO-phonon-plasmon modes at spacing between QD's and substrate as long as 100 nm.
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A. V. Baranov, A. V. Baranov, V. G. Davydov, V. G. Davydov, Anatoli V. Fedorov, Anatoli V. Fedorov, H.-W. Ren, H.-W. Ren, Shigeo Sugou, Shigeo Sugou, Yasuaki Masumoto, Yasuaki Masumoto, } "Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513860; https://doi.org/10.1117/12.513860
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