11 June 2003 High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures
Author Affiliations +
Abstract
The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was obtained. UPL mechanism was interpreted on the basis of non-linear process of two-step two-photon absorption (TS-TPA) through deep defect states including cation vacancies localized at the barier-nanoisland heterointerface.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Strelchuk, Mikhail Ya. Valakh, M. V. Vuychik, S. V. Ivanov, Petr S. Kop'ev, T. V. Shubina, "High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511505; https://doi.org/10.1117/12.511505
PROCEEDINGS
4 PAGES


SHARE
Back to Top