11 June 2003 High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures
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The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was obtained. UPL mechanism was interpreted on the basis of non-linear process of two-step two-photon absorption (TS-TPA) through deep defect states including cation vacancies localized at the barier-nanoisland heterointerface.
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V. V. Strelchuk, V. V. Strelchuk, Mikhail Ya. Valakh, Mikhail Ya. Valakh, M. V. Vuychik, M. V. Vuychik, S. V. Ivanov, S. V. Ivanov, Petr S. Kop'ev, Petr S. Kop'ev, T. V. Shubina, T. V. Shubina, } "High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511505; https://doi.org/10.1117/12.511505

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