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11 June 2003 High-mobility InAs/AlSb heterostructures for spintronics applications
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Abstract
High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical AlSb and Al0.8Ga0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri G. Sadofyev, Y. Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, and Y.-H. Zhang "High-mobility InAs/AlSb heterostructures for spintronics applications", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510557
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