11 June 2003 Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
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We obtain inelastic electronic light scattering for interband transitions between valence-band states of GaAs layer embedded by self-assembled InAs quantum dots (QDs). Under a low-power selective cw excitation above the InAs band gap but below that of GaAs at a lattice temperature Tl = 5.1 K we find anomalous photoexcitation of carriers in the InAs QDs. Unusual photoinjection of the carriers to the GaAs barrier via strong Coulomb interactions results in creation of the nonequilibrium electron-hole plasma in the GaAs layer with density of n = p = 2.5 x 1018 cm-3 and an electron temperature Te = 25 K. Observed spectra reflects the band anisotropy and extends from zero to rather large frequency shifts with a long tail with a peak at about 300 - 400 cm-1 in good agreement with theoretical prediction.
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B. H. Bairamov, B. H. Bairamov, B. P. Zakharchenya, B. P. Zakharchenya, V. V. Toporov, V. V. Toporov, V. A. Voitenko, V. A. Voitenko, F. B. Bairamov, F. B. Bairamov, Mohamed Henini, Mohamed Henini, } "Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513861; https://doi.org/10.1117/12.513861

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