11 June 2003 Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots
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The temperature dependencies of luminescence spectra of the InAs/GaAs quantum dots L0 (EL0 = 1.235 eV), L1 (EL1 = 1.290 eV) and I1 (EI1 = 1.343 eV) and wettings layer (WL) (EWL = 1.408 eV) have been investigated at P = 0 and P = 15 kbar. The InAs quantum dots on vicinal substrates GaAs at misorientation angle 7° [001] have been grown in submonolayer migration enhanced epitaxy mode (SMEE). The activation energies have been determined from the temperature quenching of luminescence. Their dependence on a value of hydrostatic pressure have been studied. The available scheme of energy levels of quantum dots has been proposed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Gaisin, V. A. Gaisin, A. Kh. Akopyan, A. Kh. Akopyan, B. S. Kulinkin, B. S. Kulinkin, B. V. Novikov, B. V. Novikov, V. N. Petrov, V. N. Petrov, Victor M. Ustinov, Victor M. Ustinov, G. E. Cirlin, G. E. Cirlin, } "Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513865; https://doi.org/10.1117/12.513865


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