11 June 2003 Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots
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Abstract
The temperature dependencies of luminescence spectra of the InAs/GaAs quantum dots L0 (EL0 = 1.235 eV), L1 (EL1 = 1.290 eV) and I1 (EI1 = 1.343 eV) and wettings layer (WL) (EWL = 1.408 eV) have been investigated at P = 0 and P = 15 kbar. The InAs quantum dots on vicinal substrates GaAs at misorientation angle 7° [001] have been grown in submonolayer migration enhanced epitaxy mode (SMEE). The activation energies have been determined from the temperature quenching of luminescence. Their dependence on a value of hydrostatic pressure have been studied. The available scheme of energy levels of quantum dots has been proposed.
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V. A. Gaisin, V. A. Gaisin, A. Kh. Akopyan, A. Kh. Akopyan, B. S. Kulinkin, B. S. Kulinkin, B. V. Novikov, B. V. Novikov, V. N. Petrov, V. N. Petrov, Victor M. Ustinov, Victor M. Ustinov, G. E. Cirlin, G. E. Cirlin, "Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513865; https://doi.org/10.1117/12.513865
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