11 June 2003 Interface luminescence and lasing at a type II single broken-gap heterojunction
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Abstract
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔEC > 0.6 eV and ΔEV > 0.35 eV). These high potential barriers produce effective electron-hole confinement at the interface and results in a tunnel-injection radiative recombination mechanism within the device due to reduce leakage current from the active region. The creation of high barriers for carriers leads to their strong accumulation in the active region and increases quantum emission efficiency of the spatially separated electrons and holes across the heteroboundary. Our approach also leads to the suppression of non-radiative Auger-recombination and a corresponding increase in the operation temperature of the laser. The active region of the laser structure consists of the type II heterojunction formed by narrow-gap In0.83Ga0.17As0.82Sb0.18 (Eg = 0.393 eV at 77 K) and wide-gap Ga0.84In0.16As0.22Sb0.78 (Eg = 0.635 eV at 77 K) layers lattice-matched to InAs substrate.
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Konstantin D. Moiseev, Konstantin D. Moiseev, Maya P. Mikhailova, Maya P. Mikhailova, Yury P. Yakovlev, Yury P. Yakovlev, Anthony Krier, Anthony Krier, "Interface luminescence and lasing at a type II single broken-gap heterojunction", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514303; https://doi.org/10.1117/12.514303
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